Electronics

A nanowire-based device may set the stage for the realization of next-generation ultrasmall memories

High-performance transistors based on silicon–germanium nanowires can be made using an approach compatible with existing mass-production techniques

Theoretical studies suggest that silicon nanowires shorter than 3 nm lose their intrinsic electronic characteristics when incorporated between metal electrodes

Flexible electronic devices are now even more likely thanks to a major new investment in Tera-Barrier Films’ revolutionary protective technology.