A*STAR Institute of Microelectronics (A*STAR IME)

Understanding stress changes in a silicon substrate as it is thinned aids semiconductor device manufacture

A nanowire-based device may set the stage for the realization of next-generation ultrasmall memories

High-performance transistors based on silicon–germanium nanowires can be made using an approach compatible with existing mass-production techniques

The smallest optical probe to date could provide real-time images of living tissues inside the body